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• W1986916495 abstract "Abstract Highly porous TiZrV films on (100) Si wafers were used to study the oxidation state of a film surface after three gas-adsorption/activation cycles using synchrotron radiation photoemission spectroscopy (SRPES). The oxidation state and composition of porous TiZrV film are highly affected by the present conditions of air-exposure/activation cycles. In the porous TiZrV films after activation treatment, the C content on the surface of the films gradually increased with increasing air-exposure/activation cycles. In the porous TiZrV film after air-exposure treatment, the O content on the surface of the films decreased with increasing of air-exposure/activation cycles. The concentration of Zr on the film surface increased with increasing of air-exposure/activation cycles. These results are caused by the formation of metal carbides on the film surface." @default.
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• W1986916495 date "2009-05-01" @default.
• W1986916495 modified "2023-09-24" @default.
• W1986916495 title "Characterization of air-exposure/activation cycles of porous Ti–Zr–V getter film using synchrotron radiation photoemission spectroscopy" @default.
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• W1986916495 doi "https://doi.org/10.1016/j.tsf.2009.01.087" @default.
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