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- W1986957029 abstract "Phase formation at temperatures well below the melting point of the phases was studied in thin silicon–near-noble-metal films by means of 4He+ ion-backscattering spectrometry and x-ray diffractometry in SiO2/Si/M film systems, where the metal-film thickness was larger than that of the Si film. In the initial stage of compound formation where both unreacted Si and M layers are present, the M2Si phase has been found. At increasing annealing times and temperatures, more and more metal-rich phases have been detected. The Si-Ni thin-film system evolution follows exactly the phase diagram reported in the literature; moreover, for Ni, Pt, and Pd-Si thin-film interactions the end phases are dictated by the phase equilibrium and can be predicted by the phase diagrams." @default.
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- W1986957029 date "1979-01-01" @default.
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- W1986957029 title "Phase diagrams and metal-rich silicide formation" @default.
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- W1986957029 doi "https://doi.org/10.1063/1.325626" @default.
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