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- W1987029150 abstract "The effects of annealing and atomic hydrogen treatment (AHT) on the interface between hydrogenated aluminum oxide (a-Al 1- x O x :H) and crystalline silicon (c-Si) were investigated. The annealing increased the negative interface fixed charge density ( Q f ) from -4.0×10 11 to -3.0×10 12 cm -2 , whereas AHT reduced Q f from -3.0×10 12 to 8.3×10 11 cm -2 . Chemical composition analyses revealed the existence of a hydrogenated silicon oxide (a-Si 1- x O x :H) interfacial layer. It was also found that annealing and AHT strongly affected the chemical compositions near the interfacial layer. The change in Q f is probably caused by the reaction at the interface between the a-Al 1- x O x :H and a-Si 1- x O x :H." @default.
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- W1987029150 date "2011-01-01" @default.
- W1987029150 modified "2023-10-14" @default.
- W1987029150 title "Effects of Annealing and Atomic Hydrogen Treatment on Aluminum Oxide Passivation Layers for Crystalline Silicon Solar Cells" @default.
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- W1987029150 doi "https://doi.org/10.1143/jjap.50.012301" @default.
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