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- W1987034762 abstract "Abstract The hydride method was used to study the InP deposition process on (100) InP wafers. The surface state obtained during substrate heating as well as the growth rate appeared to depend on phosphine decomposition. Two regimes of growth were determined. In both regimes, the behavior of the growth rate indicates a deposition process limited to the chlorine desorption by H 2 as in GaAs growth by the chloride method. Surface adsorption of P 2 molecules accounts for the difference between the two regimes. A model of phosphine decomposition was developed to predict this effect regardless of experimental conditions." @default.
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- W1987034762 date "1987-05-01" @default.
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- W1987034762 title "Effect of phosphine decomposition on the growth and substrate heating of (100) InP in the hydride method" @default.
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- W1987034762 doi "https://doi.org/10.1016/0022-0248(87)90018-2" @default.
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