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• W1987176469 abstract "We present the first application of the neutral cluster beam deposition (NCBD) method to prepare n-type organic thin-film transistors with a top-contact structure based on N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13). Systematic analysis was carried out to examine the effects of surface passivation and thermal post-treatment on the morphology and crystallinity of P13 active layers and device performance, together with operational stability as a function of time. The high room-temperature field-effect mobility of 0.58 cm2/Vs for the thermally post-treated devices was obtained under ambient conditions. The comparative study of the transport mechanisms responsible for conduction of the electron carriers over a temperature range of 10–300 K indicated that surface modification and thermal post-treatment decrease total trap density and activation energy for carrier transport by reducing structural disorder." @default.
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• W1987176469 date "2009-08-01" @default.
• W1987176469 modified "2023-09-24" @default.
• W1987176469 title "Perylrene-based n-type field-effect transistors prepared by the neutral cluster beam deposition method" @default.
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• W1987176469 doi "https://doi.org/10.1016/j.orgel.2009.04.017" @default.
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