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- W1987263811 abstract "Mitsubishi Electric Corp., 8-1-1 Tsukaguchi-Honmachi, Amagasa/ci, Hyogo 661, JapanYoh-ichi Yamaguchi, Tsutomu Shoki, Hiroyuld NagasawaHOYA Corp., 3-3-1 Musashino, Akishirna, Tokyo 196, JapanABSTRACTThe radiation damage of the component materials of X-ray masks such as W-Ti absorbers, SiCmembranes and indium tin oxide (ITO) films as anti-reflection coating materials was investigatedmechanically and optically. The stress change of the stress-free W-Ti absorber after an SR irradiationdose of 670 MJ/cm3 (equivalent to 4.5 x 105 resist shots) was less than 1 MPa. The radiation stability ofthe absorber was confirmed even after stress-free annealing treatment. Exposure of the SiC membraneswas conducted for the entire area of the window under the conditions similar to those for patternexposure. The SR-induced distortion of the SiC membrane was less than 20 nm with a dose of 130MJ/cm3 (4.0 x i05 shots) and the decrease of the transmission after the SR irradiation was less than 1%over the entire visible region. The dependence of the membrane stress on the radiation damage was notobserved. As for the ITO films, it was observed that the stress changed to the compressive side with theincrease in the SR irradiation dose independent of the initial stress condition and deposition techniques.However, the stress values tended toward saturation with the increase in the SR irradiation dose. In thisexperiment, the spin-coated ITO showed the best stability against SR irradiation in comparison with thesputtering and electron beam (EB) evaporation techniques. The refractive index of the ITO film did not" @default.
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- W1987263811 date "1994-05-13" @default.
- W1987263811 modified "2023-09-25" @default.
- W1987263811 title "Synchrotron irradiation stability of x-ray masks utilizing stress-free W-Ti absorbers and SiC membranes" @default.
- W1987263811 doi "https://doi.org/10.1117/12.175799" @default.
- W1987263811 hasPublicationYear "1994" @default.
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