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- W1987300877 abstract "The charge-density-wave (CDW) transitions in compounds ${R}_{5}{mathrm{Ir}}_{4}{mathrm{Si}}_{10}$ $(mathrm{R}=mathrm{r}mathrm{a}mathrm{r}mathrm{e}ensuremath{-}mathrm{e}mathrm{a}mathrm{r}mathrm{t}mathrm{h}$ element) have been studied by x-ray-diffraction and electrical conductivity experiments for temperatures between 20 and 300 K. At ${T}_{mathrm{CDW}}$ incommensurate CDW's $[stackrel{ensuremath{rightarrow}}{q}=(ifmmodepmelsetextpmfi{}0.25ifmmodepmelsetextpmfi{}ensuremath{delta}){c}^{*}$ with $ensuremath{delta}ensuremath{approx}0.03]$ develop in compounds with R=Ho, Er, Tm, and $({mathrm{Lu}}_{0.16}{mathrm{Er}}_{0.84}),$ while commensurate CDW's $[stackrel{ensuremath{rightarrow}}{q}=(n/7){c}^{*}]$ develop in compounds with $R=mathrm{Lu}$ and $({mathrm{Lu}}_{0.34}{mathrm{Er}}_{0.66}).$ ${T}_{mathrm{CDW}}$ varies between 83 K in R=Lu and 161.4 K in R=Ho. The compounds with an incommensurate CDW exhibit a second transition at ${T}_{mathrm{lock}ensuremath{-}mathrm{in}}<{T}_{mathrm{CDW}},$ with ${T}_{mathrm{lock}ensuremath{-}mathrm{in}}$ between 55 K in R=Er and 111.5 K in R=Tm. In ${mathrm{Ho}}_{5}{mathrm{Ir}}_{4}{mathrm{Si}}_{10}$ and ${mathrm{Er}}_{5}{mathrm{Ir}}_{4}{mathrm{Si}}_{10}$ this is a pure lock-in transition at which $ensuremath{delta}$ becomes zero. In ${mathrm{Tm}}_{5}{mathrm{Ir}}_{4}{mathrm{Si}}_{10}$ and $({mathrm{Lu}}_{0.16}{mathrm{Er}}_{0.84}{)}_{5}{mathrm{Ir}}_{4}{mathrm{Si}}_{10}ensuremath{delta}$ also becomes zero, but below ${T}_{mathrm{lock}ensuremath{-}mathrm{in}}$ additional satellite reflections have been discovered, at commensurate positions $(n/8){c}^{*}$ in ${mathrm{Tm}}_{5}{mathrm{Ir}}_{4}{mathrm{Si}}_{10}$ and at incommensurate positions $(n/8ifmmodepmelsetextpmfi{}{ensuremath{delta}}_{2}){c}^{*}$ with ${ensuremath{delta}}_{2}ensuremath{approx}0.01$ in $({mathrm{Lu}}_{0.16}{mathrm{Er}}_{0.84}{)}_{5}{mathrm{Ir}}_{4}{mathrm{Si}}_{10}.$ The development of this second CDW can be understood by a two-step mechanism similar to the mechanism for the development of the primary CDW in ${mathrm{Er}}_{5}{mathrm{Ir}}_{4}{mathrm{Si}}_{10}$ [Galli et al., Phys. Rev. Lett. 85, 158 (2000)]. At ${T}_{mathrm{lock}ensuremath{-}mathrm{in}}$ the primary CDW becomes commensurate, leading to a partly restoration of the Fermi surface, as evidenced by an anomalous decrease of the electrical resistivity for T below ${T}_{mathrm{lock}ensuremath{-}mathrm{in}}$ in ${mathrm{Ho}}_{5}{mathrm{Ir}}_{4}{mathrm{Si}}_{10}$ and ${mathrm{Er}}_{5}{mathrm{Ir}}_{4}{mathrm{Si}}_{10}.$ The modified Fermi surface then provides the favorable nesting conditions for the development of a second CDW in ${mathrm{Tm}}_{5}{mathrm{Ir}}_{4}{mathrm{Si}}_{10}$ and $({mathrm{Lu}}_{0.16}{mathrm{Er}}_{0.84}{)}_{5}{mathrm{Ir}}_{4}{mathrm{Si}}_{10}.$ The electronic character of this transition is suggested by the anomalous increase of the resistivity for T below ${T}_{mathrm{lock}ensuremath{-}mathrm{in}}.$" @default.
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- W1987300877 date "2004-01-22" @default.
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- W1987300877 title "Multiple charge-density waves in<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mrow><mml:msub><mml:mrow><mml:mi>R</mml:mi></mml:mrow><mml:mrow><mml:mn>5</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant=normal>Ir</mml:mi></mml:mrow><mml:mrow><mml:mn>4</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant=normal>Si</mml:mi></mml:mrow><mml:mrow><mml:mn>10</mml:mn></mml:mrow></mml:msub…" @default.
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- W1987300877 doi "https://doi.org/10.1103/physrevb.69.014103" @default.
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