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• W1987304089 abstract "We investigated the optical properties of ZnTe:O∕GaAs before and after atomic hydrogen irradiation. Oxygen incorporation gives rise to energy levels associated with single O atoms, O–O pairs, and O clusters, and to a blueshift of the energy gap of the material with respect to that of pure ZnTe∕GaAs. All of these effects disappear progressively after irradiation with H, which also leads to an increase in the tensile strain of the epilayer. These observations provide experimental evidence of H-induced passivation of an isoelectronic impurity in II–VI alloys." @default.
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• W1987304089 date "2006-03-06" @default.
• W1987304089 modified "2023-09-30" @default.
• W1987304089 title "Passivation of an isoelectronic impurity by atomic hydrogen: The case of ZnTe:O" @default.
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• W1987304089 doi "https://doi.org/10.1063/1.2183809" @default.
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