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- W1987332014 abstract "This article investigates the effect of thermosolutal convection in liquid phase electroepitaxial (LPEE) growth of GaAs through a two-dimensional numerical simulation model. The model accounts for heat transfer and electric current distribution with Peltier and Joule effects, diffusive and convective mass transport including the effect of electromigration, and fluid flow coupled with temperature and concentration fields. Simulations are performed for two growth cell configurations and the results are analyzed to determine growth rates, substrate shape evolution, and relative contributions of Peltier cooling and electromigration. The simulations predict and help explain a number of experimentally observed features which previous diffusion-based models fail to reproduce. In general, electromigration is found to be the dominant growth mechanism, but the contribution of Peltier cooling to the overall growth rate is found to be significantly enhanced by thermosolutal convection in the solution, and Peltier cooling can in fact become the dominant growth mechanism for certain growth conditions and growth cell configurations. The overall growth rate is found to increase with increasing furnace temperature and applied electric current density. The thermosolutal convection model predicts increased non-uniformity of the grown layers compared with the pure-diffusion model. The shape of the grown layers is also shown to be very sensitive to changes in growth cell configurations." @default.
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- W1987332014 date "1995-04-01" @default.
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- W1987332014 title "Role of thermosolutal convection in liquid phase electroepitaxial growth of gallium arsenide" @default.
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- W1987332014 doi "https://doi.org/10.1016/0022-0248(94)00968-6" @default.
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