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• W1987355973 abstract "In this work we use transmission electron microscopy to identify extended lattice defects which result from O + ion implantation at a dose of 1.3×10 15 /cm 2 into Sn-doped In 2 O 3 at room temperature. Measurement of the resistivity, mobility, carrier density, and transmissivity to visible light as a function of implant dose (0 to 1.3×10 15 /cm 2 ) reveals that increasing dose results in a degradation in electronic and optical properties of ITO. Analysis of these results using charged and neutral scattering models reveals that the observed changes in electronic and optical properties may be due to the generation of neutral scattering centers. Transmission electron microscopy analysis of heavily O + implanted films reveals the presence of intragranular regions of isolated strain contrast indicating lattice damage which may be associated with these neutral scatter centers." @default.
• W1987355973 created "2016-06-24" @default.
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• W1987355973 date "1993-09-01" @default.
• W1987355973 modified "2023-09-25" @default.
• W1987355973 title "Lattice Defects in O⁺ Implanted Tin-Doped Indium Oxide Films" @default.
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• W1987355973 doi "https://doi.org/10.1143/jjap.32.l1352" @default.
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