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- W1987387369 abstract "The growth mechanism of Si epitaxial film at low temperatures on Si(100) by photochemical vapor deposition (photo-CVD) is analyzed theoretically by using reaction models both in the gas phase and on the surface. We discuss three surface reactions: the growth of Si from SiH 3 radicals, the dangling bond termination by atomic hydrogen and the abstraction of bonding hydrogen by SiH 3 radicals. The parameters of the surface-reaction model are estimated from the experimental results, assuming that the film structure is determined by the hydrogen surface-coverage ratio “θ”. The theoretical analysis explains well the experimental results of the Si films grown under various conditions." @default.
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- W1987387369 date "1999-06-01" @default.
- W1987387369 modified "2023-10-14" @default.
- W1987387369 title "Growth Mechanism during Silicon Epitaxy by Photochemical Vapor Deposition at Low Temperatures" @default.
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- W1987387369 doi "https://doi.org/10.1143/jjap.38.3622" @default.
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