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• W1987449314 endingPage "073726" @default.
• W1987449314 startingPage "073726" @default.
• W1987449314 abstract "In a previous work, we examined subgap states in highly doped amorphous In-Ga-Zn-O (a-IGZO) films by hard x-ray photoelectron spectroscopy (HX-PES) and found they had subgap electronic states above the valence band maximum (VBM) with the densities > 5 × 1020 cm−3 and just below the Fermi level with the densities > 5 × 1019 cm−3 [K. Nomura, T. Kamiya, H. Yanagi, E. Ikenaga, K. Yang, K. Kobayashi, M. Hirano, and H. Hosono, Appl. Phys. Lett. 92, 202117 (2008)]; however, their electron densities (Ne > 3 × 1019 cm−3) are rather high and not compatible with rational properties required for active channel layers in thin-film transistors (TFTs). In this work, we report the effects of Ne and thermal annealing on the subgap states in order to provide the data useful for actual TFTs. It was found that the low-Ne a-IGZO films had extra subgap states above VBM similar to the previous report, but their densities were as small as ∼2.0 × 1020 cm−3 for the highly resistive, wet-annealed a-IGZO films. Angle-dependent HX-PES revealed that the subgap states above VBM concentrate in the surface region. The O 1s peak indicated that the wet annealing suppressed the generation of subgap states by terminating these states with –OH bonds. The subgap states below EF were observed commonly in all the samples including ZnO, crystalline (c-) IGZO and a-IGZO. It is concluded that these states below EF are neither related to the disordered structures of a-IGZO nor to their TFT characteristics. It is considered that these states are related to the metastable states created by the high-energy photons in vacuum." @default.
• W1987449314 created "2016-06-24" @default.
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• W1987449314 date "2011-04-01" @default.
• W1987449314 modified "2023-10-14" @default.
• W1987449314 title "Depth analysis of subgap electronic states in amorphous oxide semiconductor, a-In-Ga-Zn-O, studied by hard x-ray photoelectron spectroscopy" @default.
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• W1987449314 doi "https://doi.org/10.1063/1.3560769" @default.
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