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- W1987457526 abstract "The electrons in inversion layers of (100) silicon MOSFETs were heated at helium temperatures with source drain fields of the order l Vcm. The electron temperature as derived from the amplitudes of Shubnikov-De Haas oscillations was studied as a function of lattice temperature and substrate bias Usb. Whereas at temperatures of about 4 K. the electron temperature hardly changed with substrate bias, it increased substantially with Usb, at temperatures of 2 K and lower. This observation cannot he explained by currently discussed models for the electron energy losses. It is proposed that the low temperature behaviour arises from the anomalous thermal and dielectric properties of the amorphous SiO2 layer adjacent to the channel. Various experiments indicate that vitreous SiO2 can be considered as a two-level system with low energy excitations." @default.
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- W1987457526 date "1982-01-01" @default.
- W1987457526 modified "2023-09-23" @default.
- W1987457526 title "Energy loss of warm electrons at the interface of (100) silicon MOSFETs" @default.
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- W1987457526 doi "https://doi.org/10.1016/0167-2584(82)90473-x" @default.
- W1987457526 hasPublicationYear "1982" @default.
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