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- W1987536275 abstract "We demonstrate photovoltaic integrated circuits (PVIC) with high-quality large-grain Copper Indium GalliumSelenide (CIGS) obtained with the unique combination of low-cost ink-based or Physical Vapor Deposition (PVD)based nanoengineered precursor thin films and a reactive transfer printing method. Reactive transfer is a two-stageprocess relying on chemical reaction between two separate precursor films to form CIGS, one deposited on thesubstrate and the other on a printing plate in the first stage. In the second stage, these precursors are brought intointimate contact and rapidly reacted under pressure in the presence of an electrostatic field while heat is applied.The use of two independent thin films provides the benefits of independent composition and flexible depositiontechnique optimization, and eliminates pre-reaction prior to the synthesis of CIGS. High quality CIGS with largegrains on the order of several microns, and of preferred crystallographic orientation, are formed in just severalminutes based on compositional and structural analysis by XRF, SIMS, SEM and XRD. Cell efficiencies of 14%and module efficiencies of 12% have been achieved using this method. When atmospheric pressure deposition ofinks is utilized for the precursor films, the approach additionally provides further reduced capital equipment cost,lower thermal budget, and higher throughput." @default.
- W1987536275 created "2016-06-24" @default.
- W1987536275 creator A5050942551 @default.
- W1987536275 date "2009-08-20" @default.
- W1987536275 modified "2023-09-23" @default.
- W1987536275 title "Nanoscale self-assembly of high-efficiency copper indium gallium selenide photovoltaic thin films" @default.
- W1987536275 doi "https://doi.org/10.1117/12.827488" @default.
- W1987536275 hasPublicationYear "2009" @default.
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