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- W1987579897 abstract "The results of electron microscopic and electron diffraction investigation of the surface during annealing of single-crystal AIIBVI (CdS, CdSe, ZnSe, ZnS) films in the presence of oxygen are reported. It is shown that the behaviour of islands of cadmium oxide formed by chemical interaction between O2 and the CdS, CdSe substrate in the process of growth resembles that of the nuclei in film condensation. CdO films become “continuous” more quickly, if the size of blocks of substrate-epitaxial AIIBVI film is larger. Epitaxial ZnO films formed on the surface of epitaxial ZnS and ZnSe layers are of a wurtzite structure or a cubic structure with the parameter a = 4.5 Å. Es wird über die Ergebnisse elektronenmikroskopischer und Elektronenbeugungs-Untersuchungen von Oberflächen beim Tempern von einkristallinen AIIBVI (CdS, CdSe, ZnSe, ZnS)-filmen in Gegenwart von Sauerstoff berichtet. Die Inseln von Cadmiumoxid, die sich bei der Reaktion zwischen O2 und dem CdS-, CdSe-Substrat gebildet haben, ähneln im Wachstumsprozeß denen der Keime bei der Kondensation von dünnen Schichten. CdO-Schichten werden schneller gleichmäßig, wenn die Erstreckung der Blöcke aus Substrat – epitaktischer AIIBVI-Film größer ist. – Epitaktische ZnO-Filme auf der Oberfläche epitaktischer ZnS- und ZnSe-Schichten haben Wurtzit- oder kubische Struktur mit einem Gitterparameter von a = 4,5 Å." @default.
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- W1987579897 date "1972-01-01" @default.
- W1987579897 modified "2023-09-27" @default.
- W1987579897 title "The Process of Formation of Epitaxial Cadmium and Zinc Oxide Films by Interaction of Single-Crystal AIIBVI Layers with Oxygen" @default.
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- W1987579897 doi "https://doi.org/10.1002/crat.19720070808" @default.
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