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• W1987612870 abstract "Abstract A number of metal/GaAs(110) interfaces prepared at room temperature and 80 K low temperature have been studied using photoelectron spectroscopy. Through two examples (non-reactive Ga/GaAs and reactive Cr/GaAs interfaces) we demonstrate that by controlling the temperature at which the interface is formed one can possibly identify the interface states which are responsible for the semiconductor band bending and Fermi level pinning. At low temperature, the low-coverage band bending is due to the surface donor states originating from metal atom chemisorption on the semiconductor surfaces. The Fermi level is pinned at high coverages mainly by two classes of interface states. Defects are dominant at the disrupted interfaces (mostly formed at room temperature), and the metal-induced gap states are important at the nearly ideal interface formed at low temperature. In general, the interplay between the defects and the metal-induced gap states has to be taken into account to determine the final Fermi level position relative to the band edges and the Schottky barrier height." @default.
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• W1987612870 date "1989-12-01" @default.
• W1987612870 modified "2023-09-26" @default.
• W1987612870 title "Use of temperature to study the nature of interface states and Fermi level pinning with metals on GaAs(110)" @default.
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• W1987612870 doi "https://doi.org/10.1016/0040-6090(89)90471-9" @default.
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