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- W1987643790 abstract "An intense ultraviolet photoluminescence peaked at 286 nm and 396 nm from Ge+-implanted SiO2 film thermally grown on crystal silicon was observed. After 1100°C annealing, a weak near-infrared emission peak at 840 nm was measured at low temperature (77 K). Annealing analyses and X-ray photoemission spectroscopy measurement show that the ultraviolet peaks are caused by S1 → S0 and T1 → S0 transition in GeO color centers formed during implantation and annealing, while the infrared one is due to the quantum confinement effect in Ge clusters formed at high annealing temperatures." @default.
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- W1987643790 date "1997-07-01" @default.
- W1987643790 modified "2023-10-14" @default.
- W1987643790 title "Photoluminescence from Ge+-implanted SiO2 films on Si substrate and its mechanism" @default.
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- W1987643790 doi "https://doi.org/10.1016/s0375-9601(97)00387-3" @default.
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