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• W1987777978 abstract "Abstract Atomic force microscopy (AFM) was used to estimate the etching form on excimer laser ablation of polythiophene films. Electrochemically prepared polythiophene films were irradiated with ArF (193 nm) and KrF (248 nm) excimer lasers through a mask attached to the film. Single pulse irradiation of these lasers created a well-defined periodic structure on the irradiated region. The periodic structure was ascribed to Fresnel diffraction of the incident beam with the edge of the mask and was characteristic of non-fusible polythiophene films. The threshold fluences above which the etching occurs were determined to be approximately 30 and 50 mJ cm −2 for the 193 nm and 248 nm lasers respectively. The emission spectra from the plume suggested that the degree of fragmentation was higher for 193 nm irradiation than for 248 nm irradiation at the same fluence. © 1997 Elsevier Science S.A." @default.
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• W1987777978 date "1997-06-01" @default.
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• W1987777978 title "AFM study of excimer laser ablation of polythiophene films" @default.
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• W1987777978 doi "https://doi.org/10.1016/s1010-6030(97)00033-6" @default.
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