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- W1987804711 abstract "Band engineering in TANOS (TaN-Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> -Si <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sub> -SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> -Silicon) Flash memory utilizing an interfacial dipole is demonstrated for the first time. A dipole layer at the tunnel oxide/charge storage layer interface leads to increase in programming speed while maintaining good retention and endurance. Using a dipole layer results in a 40% increase in Va, shift at program voltage V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>g</sub> -V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>fb</sub> , = 11 V. The performance improvement by dipole incorporation into the TANOS stack is discussed." @default.
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- W1987804711 date "2008-04-01" @default.
- W1987804711 modified "2023-10-06" @default.
- W1987804711 title "Tunnel Oxide Dipole Engineering in TANOS Flash Memory for Fast Programming with Good Retention and Endurance" @default.
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- W1987804711 doi "https://doi.org/10.1109/vtsa.2008.4530795" @default.
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