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• W1987806852 abstract "We have developed an extraction technique of trap densities in thin films and at insulator interfaces of thin-film transistors (TFTs). These trap densities can be extracted and separated from capacitance–voltage ( C – V ) and current–voltage ( I – V ) characteristics by numerically calculating Q = C V , Poisson equation, carrier density equations, and Gauss's law. The trap densities in the upper and lower halves of the band gap are extracted from n- and p-type TFTs, respectively. The outstanding advantages are intuitive understandability and a simple algorithm. Actual trap densities are extracted for high-temperature polycrystalline silicon (poly-Si) TFTs." @default.
• W1987806852 created "2016-06-24" @default.
• W1987806852 creator A5012451825 @default.
• W1987806852 date "2011-03-01" @default.
• W1987806852 modified "2023-09-27" @default.
• W1987806852 title "Extraction Technique of Trap Densities in Thin Films and at Insulator Interfaces of Thin-Film Transistors" @default.
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• W1987806852 doi "https://doi.org/10.1143/jjap.50.03cb01" @default.
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