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- W1987807031 abstract "In this letter, we optimize and investigate for the first time the effect of source/drain spacer oxide on the performance of a dual gate ambipolar silicon nanowire field effect transistor. Using extensive 3-D TCAD simulations, we show that the OFF-state leakage can be reduced by more than two orders of magnitude owing to the combined use of HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> spacer and high-κ gate dielectric, resulting in an enhanced ON/OFF current ratio >10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>11</sup> for both n and p-FET as compared with reported values of ~10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>9</sup> . Comparing with the existing experimental dual and trigate ambipolar devices, 64.1% improvement in subthreshold slope for n-FET and 61.8% (40.9%) for n (p-FET) are observed. Having, an improvement in the ON-state current with J <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>Dmax</sub> of 767.51 (263.05) kA/cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-2</sup> for n-FET (pFET), the device promises excellent ultra low power logic performance, with ambipolarity." @default.
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- W1987807031 date "2015-05-01" @default.
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- W1987807031 title "Spacer Engineering-Based High-Performance Reconfigurable FET With Low OFF Current Characteristics" @default.
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- W1987807031 doi "https://doi.org/10.1109/led.2015.2415039" @default.
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