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- W1987835008 abstract "Using a reduced pressure-chemical vapor deposition cluster tool, we have studied the epitaxial growth of Si using either a silane or a dichlorosilane+hydrochloric acid chemistry on fullsheet, patterned and silicon-on-insulator (SOI) substrates. We have first of all developed a (“HF-last” advanced wet cleaning+low thermal budget (775°C, 2 min) in situ H2 bake) combination that yields atomically smooth, contamination free Si starting surfaces for both fullsheet and patterned wafers. We have then modeled the low temperature Si growth rate (silane or dichlorosilane+hydrochloric acid chemistry) on fullsheet wafers. A similar growth rate activation energy is found for both chemistries, i.e. EGR∼50 kcal mol−1. The growth rate dependency on the Si precursor flow is vastly different, however. Fitting this dependency with a simple power law, a value of 0.36 is indeed associated to dichlorosilane, versus 0.92 for silane. The HCl etching rate is characterized by an activation energy EER∼34 kcal mol−1, with a 0.52 power law dependency on the HCl flow. On patterned wafers, we have demonstrated that a deposited Si thickness limit (20 nm) exists at 775°C for high F(HCl)/F(SiH2Cl2) mass flow ratios. This limit disappears when (i) F(HCl)/F(SiH2Cl2) is reduced (ii) the growth temperature is increased to 800°C. Finally, we have highlighted the specifics of the growth on SOI wafers. A significant growth rate reduction (compared to bulk Si) has been evidenced on ultra-thin Si over-layer SOI wafers. It gets less and less pronounced as the buried oxide layer gets thinner and/or the Si over-layer thickness increases." @default.
- W1987835008 created "2016-06-24" @default.
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- W1987835008 date "2003-09-01" @default.
- W1987835008 modified "2023-10-16" @default.
- W1987835008 title "Growth kinetics of Si on fullsheet, patterned and silicon-on-insulator substrates" @default.
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- W1987835008 doi "https://doi.org/10.1016/s0022-0248(03)01380-0" @default.
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