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- W1987851448 abstract "The relationship between photoresist treatment prior to etch and subsequent oxide sidewall hole profile is investigated. Etched features were examined immediately after resist pattern definition with post-expose bake, then after oven hard bake or deep UV photostabilization. It was observed that taper of the etched oxide profile depends on pre-treatment temperature. Etch chemistry influences the relative change in taper across a range of pre-treatment temperatures. `Bowing,' as well as reticulated or `burnt' resist is eliminated. Profile variation across the wafer is reduced with deep UV photostabilization. Microscopic etch uniformity (RIE lag) also depends on the interaction between resist pre-treatment and oxide etch chemistry." @default.
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- W1987851448 date "1993-09-15" @default.
- W1987851448 modified "2023-09-26" @default.
- W1987851448 title "Interaction between photoresist pretreatment and high-aspect-ratio contact and via hole definition" @default.
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- W1987851448 doi "https://doi.org/10.1117/12.156531" @default.
- W1987851448 hasPublicationYear "1993" @default.
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