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- W1987994039 abstract "The reliability of Cr Schottky-barrier high-efficiency (hi-lo) GaAs IMPATTs has been investigated. Devices operated under d.c. conditions degraded due to compensation of the electron concentration in the avalanche region of the devices. This degradation was not observed in diodes oven-tested with no bias applied." @default.
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- W1987994039 date "1979-01-01" @default.
- W1987994039 modified "2023-09-26" @default.
- W1987994039 title "Compensation degradation mechanism for high-efficiency GaAs IMPATT diodes" @default.
- W1987994039 doi "https://doi.org/10.1049/el:19790054" @default.
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