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Matches in SemOpenAlex for { <https://semopenalex.org/work/W1988217577> ?p ?o ?g. }

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• W1988217577 abstract "A large-area GaN-based light-emitting diode (LED) 1000×1000 µm 2 in size with a p-side down configuration was fabricated using wafer bonding and laser lift-off (LLO) techniques. The thin GaN LED was transferred onto a copper substrate without peeling or cracks. The large-area LEDs showed a uniform light-emission pattern over entire defined mesa area without a transparent contact layer on the p-type GaN. The operating current of the large-area LEDs can be driven up to 1000 mA with continuously increasing light output-power. The light output-power is 240 mW with a driving current of 1000 mA. Large-area emission and high current operation make the LLO-LEDs applicable to high-power LED applications." @default.
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• W1988217577 date "2005-04-01" @default.
• W1988217577 modified "2023-10-18" @default.
• W1988217577 title "Fabrication of Large-Area GaN-Based Light-Emitting Diodes on Cu Substrate" @default.
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• W1988217577 doi "https://doi.org/10.1143/jjap.44.2509" @default.
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