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• W1988285381 abstract "A zero V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>TH</sub> memory cell scheme for the ferroelectric (Fe)-NAND flash memory is proposed. In the zero V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>TH</sub> memory cell scheme, the middle of V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>TH</sub> of erased and programmed cells is 0 V. Based on the measurement, this paper shows for the first time that the reliability of a Fe-NAND cell such as the data retention, read disturb, and program disturb is best optimized in the proposed zero V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>TH</sub> cell. The measured V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>TH</sub> shift due to the read disturb, program disturb and data retention decreases by 32%, 24% and 10%, respectively. Contrarily, in the negative V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>TH</sub> cell where the middle of V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>TH</sub> of erased and programmed cells is negative, the V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>TH</sub> shift during the data retention is as much as 0.49 V and unacceptably large. In the conventional positive V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>TH</sub> cell where the middle of V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>TH</sub> of erased and programmed cells is positive suffers from a sever read and program disturb. The measured results are drastically different from those of the conventional floating-gate NAND cell where the negative V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>TH</sub> cell is most suitable in terms of the reliability." @default.
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• W1988285381 date "2009-09-01" @default.
• W1988285381 modified "2023-10-14" @default.
• W1988285381 title "A zero V<inf>TH</inf> memory cell ferroelectric-NAND flash memory with 32% read disturb, 24% program disturb, 10% data retention improvement for enterprise SSD" @default.
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• W1988285381 doi "https://doi.org/10.1109/essderc.2009.5331440" @default.
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