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• W1988355955 abstract "Field emission characteristics of ultra-nanocrystalline diamond (UNCD) have recently caught much attraction due to its importance in technological applications. In this work, we have fabricated lateral-field emitters comprised of UNCD films, which were deposited in CH4/Ar medium by microwave plasma-enhanced chemical vapor deposition method. The substrates, silicon-on-insulator (SOI) or SiO2-coated silicon, were pre-treated by mixed-powders-ultrasonication process for forming diamond nuclei to facilitate the synthesis of UNCD films on these substrates. Lateral electron field emitters can thus be fabricated either on silicon-on-insulator (SOI) or silicon substrates. The lateral emitters thus obtained possess large field enhancement factor (β = 1500–1721) and exhibit good electron field emission properties, regardless of the substrate materials used. The electron field emission can be turned on at 5.25–5.50 V/μm, attaining 5500–6000 mA/mm2 at 12.5 V/μm (100 V applied voltage)." @default.
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• W1988355955 date "2008-04-01" @default.
• W1988355955 modified "2023-09-26" @default.
• W1988355955 title "Fabrication and field emission properties of ultra-nanocrystalline diamond lateral emitters" @default.
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• W1988355955 doi "https://doi.org/10.1016/j.diamond.2008.01.024" @default.
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