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• W1988463065 abstract "Abstract High‐quality In x Al 1– x N (0.71 ≤ x In ≤ 1.00) nanocolumns (NCs) have been grown on Si(111) substrates by rf‐plasma‐assisted molecular‐beam epitaxy (rf‐MBE). Low‐temperature photoluminescence (LT‐PL) spectra of various In‐rich InAlN NCs were measured at 4 K and single peak PL emissions were observed in the wavelength region from 0.89 µm to 1.79 µm. Temperature‐dependent PL spectra of In 0.92 Al 0.08 N NCs were studied and the so‐called “S‐shape” (decrease–increase–decrease) PL peak energy shift was observed with increasing temperature. This shift indicates the carrier localization induced by the In segregation effect and is different from the anomalous blue shift frequently observed in InN films and nanowires with high residual carrier concentra‐ tions. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)" @default.
• W1988463065 created "2016-06-24" @default.
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• W1988463065 creator A5059983051 @default.
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• W1988463065 date "2012-01-09" @default.
• W1988463065 modified "2023-10-09" @default.
• W1988463065 title "Low-temperature photoluminescence studies of In-rich InAlN nanocolumns" @default.
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• W1988463065 doi "https://doi.org/10.1002/pssr.201105564" @default.
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