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- W1988538714 abstract "Due to a huge lattice mismatch of about 20% theoretically existing between SiC and Si, it is difficult for growing monocrystalline Si/SiC heterojunction to realize the light control of SiC devices. However, based on a 4:5 Si-to-SiC atomic lattice matching interface structure, the monocrystalline Si films were epitaxially prepared on the 6H-SiC (0 0 0 1) substrate by hot-wall chemical vapor deposition in our work. The film was characterized by X-ray diffraction analysis with only (1 1 1) orientation occurring. The X-ray rocking curves illustrated good symmetry with a full width at half maximum of 0.4339° omega. A 4:5 Si-to-SiC atomic matching structure of the Si/6H-SiC interface clearly observed by the transmission electron microscope revealed the essence of growing the monocrystalline Si film on the SiC substrate." @default.
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- W1988538714 date "2012-06-01" @default.
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- W1988538714 title "The epitaxial growth of (111) oriented monocrystalline Si film based on a 4:5 Si-to-SiC atomic lattice matching interface" @default.
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- W1988538714 doi "https://doi.org/10.1016/j.materresbull.2012.03.018" @default.
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