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• W1988587529 abstract "A new model is presented for the calculation of the dislocation density of semiconductor crystals as a function of the thermal boundary conditions during growth. This model is based upon the basic equations of plastic deformation to describe the movement and multiplication of dislocations according to Alexander and Haasen instead of using the unrealistic concept of a critical resolved shear stress (CRSS). It takes into consideration the non-linear behaviour of the deformation process, e.g. the dependence of the multiplication of dislocations on stress and the dependence of the strain rate on the actual dislocation density, the stress and the temperature. This dynamic model also includes the temporal variation of parameters during the growth process and can, for example, be used to calculate the dislocation density as a function of the growth rate. In the last section of this paper the model is applied to the growth of InP crystals by the LEC technique. A quantitative agreement is obtained for the results of the numerical modeling and real crystal growth for different boundary conditions." @default.
• W1988587529 created "2016-06-24" @default.
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• W1988587529 date "1989-09-01" @default.
• W1988587529 modified "2023-10-18" @default.
• W1988587529 title "A new model for the calculation of dislocation formation in semiconductor melt growth by taking into account the dynamics of plastic deformation" @default.
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• W1988587529 doi "https://doi.org/10.1016/0022-0248(89)90255-8" @default.
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