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- W1988588840 abstract "The carrier transport phenomena of p-Si wires on n-Si(100) substrates fabricated by selective ion implantation using focused Ga + ion beams have been examined. We have successfully controlled the electrical conduction in p-Si wires by changing doses and annealing temperatures, and found that three kinds of electrical conduction mechanisms, namely metallic conduction, one-dimensional variable-range-hopping (1D-VRH) conduction and nearest-neighbor-hopping (NNH) conduction, can be observed below 70 K. The 1D-VRH conduction is observed in samples with doses of 3.5 to 5.6× 10 9 cm -1 at annealing temperatures of 600 to 690°C and the NNH conduction in samples under the conditions of lower doses or higher temperatures. In these systems, negative magnetoresistance is observed in the NNH conduction and positive magnetoresistance in the VRH conduction. The density of localized states per unit energy in a localization length at the Fermi level, ρ F α -1 , is estimated to be 200–300 eV -1 in the VRH conduction." @default.
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- W1988588840 date "1994-12-01" @default.
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- W1988588840 title "Carrier Transport Properties of Conductive p-Si Wires by Focused Ion Beam Implantation" @default.
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- W1988588840 doi "https://doi.org/10.1143/jjap.33.7190" @default.
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