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• W1988594635 abstract "We investigated the contributions of neutral and charged silicon self-interstitials to self- and boron diffusion during transient enhanced diffusion in silicon. We simultaneously observed self- and boron diffusion in silicon using Snati/S28i isotope superlattices. A calculation based on diffusion equations involving {311} defects and boron-interstitial cluster models was employed to reproduce the diffusion profiles in silicon-implanted (intrinsic) and boron-implanted (extrinsic) silicon isotope superlattices, followed by annealing. To investigate the diffusion processes, the time evolution of the silicon self-interstitial profiles during the transient diffusion was simulated. The results directly demonstrate that excess neutral self-interstitials dominantly enhance the self-diffusion during the transient process in the intrinsic conditions, while doubly positively charged self-interstitials dominate the self-diffusion in the extrinsic conditions." @default.
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• W1988594635 date "2009-01-01" @default.
• W1988594635 modified "2023-09-27" @default.
• W1988594635 title "Behaviors of neutral and charged silicon self-interstitials during transient enhanced diffusion in silicon investigated by isotope superlattices" @default.
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• W1988594635 doi "https://doi.org/10.1063/1.3054325" @default.
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