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- W1988672662 abstract "Abstract We report on molecular beam epitaxial growth and characterization of InAs/GaInSb/InAs/AlGaAsSb type-II miniband-to-bound state W-lasers. Laser core structures were characterized using photoluminescence, high resolution X-ray diffraction and Raman spectroscopy to reveal the best growth conditions. The growth temperature for the laser core was varied in the range between 380 °C and 460 °C and found to be optimal at 420 °C. Optimized laser active regions were embedded between 600 nm AlGaAsSb separate confinement layers which in turn were sandwiched between 1.5 μm thick n- and p-doped Al 0.85 Ga 0.15 As 0.07 Sb 0.93 cladding layers. The upper cladding was capped with a 100 nm p + -GaSb contact layer. The growth temperature of the upper separate confinement and cladding layer was varied between 470 °C and 530 °C to reveal the influence on laser performance. Laser emission is observed near 3.2 μm. Devices with uncoated facets, mounted substrate side down could be operated up to a temperature of 185 K in continuous-wave (cw) mode. Single ended output powers of 144 mW in cw mode and 330 mW in pulsed operation were obtained for a 5-period diode laser structure with HR/AR coated mirror facets at an operation temperature of 110 K." @default.
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- W1988672662 date "2005-05-01" @default.
- W1988672662 modified "2023-09-24" @default.
- W1988672662 title "MBE growth of mid-IR type-II interband laser diodes" @default.
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- W1988672662 doi "https://doi.org/10.1016/j.jcrysgro.2004.12.155" @default.
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