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- W1988707836 abstract "A model based on the balance between the thermodynamic driving force and the kinetic limitation due to atomic and thermal diffusion is presented which can extract quantitative information on the mechanism governing reactive solid interfaces such as occur in many metal-semiconductor systems. The model is used to develop equations which fit the photoelectron intensity data available for the V/Ge(111) system as a function of temperature. We show that the composition and densities of the reaction products can be obtained and that the compound formed is the same as one reported in the bulk phase diagram. Predictions are made as to the effect of the substrate thermal conductivity on the extent of the interfacial region." @default.
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- W1988707836 date "1988-06-15" @default.
- W1988707836 modified "2023-10-18" @default.
- W1988707836 title "Mechanism for reactive chemistry at metal-semiconductor interfaces" @default.
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- W1988707836 doi "https://doi.org/10.1103/physrevb.37.10487" @default.
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