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- W1988730503 abstract "A high-performance amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) was achieved using a double stacked channel layer (DSCL). An oxygen-poor IGZO film was deposited in pure argon ambient as a buffer layer to prevent oxygen plasma bombardment and improve device performance. An oxygen-rich IGZO film was then deposited on top of that buffer layer to modulate device stability. With this structure, an interface with low oxygen-plasma-induced damage and few oxygen vacancies in the bulk was achieved using DSCL, leading to a higher stability of the threshold voltage." @default.
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- W1988730503 date "2013-08-09" @default.
- W1988730503 modified "2023-10-18" @default.
- W1988730503 title "Modulation of Interface and Bulk States in Amorphous InGaZnO Thin-Film Transistors with Double Stacked Channel Layers" @default.
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- W1988730503 doi "https://doi.org/10.7567/jjap.52.090205" @default.
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