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- W1988739644 abstract "Recent advances in GaSb-based crystal growth technology have led to the demonstration of high performance quantum well lasers which emit at mid-infrared wavelengths. In fabricating such lasers, techniques are utilized which are processing intensive and time consuming. In this work, we report on the use of a pulsed anodic oxidation (anodization) technique to fabricate low-ridge, wide-stripe GaInAsSb/AlGaAsSb lasers operating near 2 micrometers . The low-ridge stripe areas are defined in one, 5-minute processing step which converts the p<SUP>+</SUP> layer outside the stripe area into a uniform, stable native oxide." @default.
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- W1988739644 date "1995-04-28" @default.
- W1988739644 modified "2023-10-14" @default.
- W1988739644 title "Pulsed anodization technique for fabricating GaSb-based lasers" @default.
- W1988739644 doi "https://doi.org/10.1117/12.208453" @default.
- W1988739644 hasPublicationYear "1995" @default.
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