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- W1988810070 abstract "AgCI layers have been used as an example to show that the characteristic impedance of the layer material interferes with space-charge capacitance measurements of EOS devices. Correction methods are proposed to evaluate the flat band voltage accurately. The impedance characteristics of silver chloride are consistent with literature data but a significant difference is observed between the apparent and the real geometrical factors specific to the deposition conditions. Experimental results demonstrate the need for a thermodynamically reversible cell for measuring Cl− concentration." @default.
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- W1988810070 date "1990-06-01" @default.
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- W1988810070 title "The C-V method for characterizing ISFET or EOS devices with ion-sensitive membranes" @default.
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- W1988810070 doi "https://doi.org/10.1016/0022-0728(90)85062-a" @default.
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