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• W1988985930 abstract "Electrical behaviors at two single-crystal metal-semiconductor interfaces are studied. Schottky-barrier heights of Ni${mathrm{Si}}_{2}$ layers grown under ultrahigh-vacuum conditions on $n$-type Si(111) are found to be 0.65 and 0.79 eV for type-$A$ and type-$B$ epitaxial systems, respectively. These results are compared with the proposed theoretical models of Schottky barriers." @default.
• W1988985930 created "2016-06-24" @default.
• W1988985930 creator A5013834953 @default.
• W1988985930 date "1984-02-06" @default.
• W1988985930 modified "2023-10-01" @default.
• W1988985930 title "Schottky-Barrier Formation at Single-Crystal Metal-Semiconductor Interfaces" @default.
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• W1988985930 doi "https://doi.org/10.1103/physrevlett.52.461" @default.
• W1988985930 hasPublicationYear "1984" @default.
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