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• W1988989110 abstract "This paper describes a simple cantilever method we used to characterize the stability of candidate mask substrate materials during exposure to X-rays. By monitoring the curvature of a cantilever beam of the film of interest on a silicon wafer we can calculate the stress or volume changes in the film when exposed to X-rays. These measurements can be used to gauge the relative merits of different materials for use in X-ray masks. Examples are provided on measurements we have made on the stress change in boron nitride, silicon carbide and diamond films." @default.
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• W1988989110 date "1991-03-01" @default.
• W1988989110 modified "2023-09-25" @default.
• W1988989110 title "X-ray induced damage studies in SIC X-ray lithography mask membranes" @default.
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• W1988989110 doi "https://doi.org/10.1016/0167-9317(91)90089-v" @default.
• W1988989110 hasPublicationYear "1991" @default.
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