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- W1988996850 abstract "Both compressive strain (εc) and hole mobility (μh) were investigated for SiGe-on-insulator substrates with different values for the SiGe layer thickness (d) and Ge fraction (Ge%), which were fabricated by Ge condensation. We found that the εc introduced during Ge condensation was strongly dependent on d and Ge%. Thinner d is helpful for maintaining higher εc when Ge% is 50%. εc is dramatically relaxed with a further increase in Ge%. By varying the tradeoff between Ge% and εc, we achieved a maximum μh of approximately 570 cm2/V·s in the d range of 9–11 nm and Ge% range of 50–65%." @default.
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- W1988996850 date "2012-02-01" @default.
- W1988996850 modified "2023-10-10" @default.
- W1988996850 title "Influence of SiGe layer thickness and Ge fraction on compressive strain and hole mobility in a SiGe-on-insulator substrate fabricated by the Ge condensation technique" @default.
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- W1988996850 doi "https://doi.org/10.1016/j.tsf.2011.10.078" @default.
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