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- W1989003670 abstract "A one-dimensional model is described for a polysilicon emitter bipolar transistor, whose emitter drive-in has been low enough so that there is no single-crystal part to the emitter. Both direct and trap-assisted tunnelling as well as recombination mechanisms both at the interface and in the space charge region are considered in detail. The model is versatile enough to handle all configurations of the potential barrier presented by the interfacial layer and the semiconductors. A good fit to experimental results is obtained, and a full study of the effect of varying the physical parameters of the model is made. These include the surface recombination coefficients, the band-gap narrowing, the doping concentration (ND) in the emitter and (NA) in the base. An earlier companion paper included effects of varying additional parameters. It is found that the poorer current gain displayed by this kind of device (as compared with an equivalent transistor with a single-crystal region as part of the emitter) is due to increased recombination at the interface. However, a very large gain (in excess of 10000) is predicted, for this type of device, if the interface state density is lowered sufficiently (to a value of 109 cm-2, or below). The cause of a pronounced kink in the base current characteristic, which is observed experimentally, is fully explained and furthermore it is shown that this can lead to a negative differential resistant regime for certain parameter values." @default.
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- W1989003670 date "1989-11-01" @default.
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- W1989003670 title "A model of polysilicon emitter transistors devoid of a single-crystal emitter region" @default.
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- W1989003670 doi "https://doi.org/10.1088/0268-1242/4/11/004" @default.
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