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- W1989039968 abstract "Sulfur (S+) ions were implanted into gallium arsenide (GaAs) at 50 keV at various doses. Hydrogenated amorphous silicon (a-Si:H) films were deposited on the surface of the S+-implanted GaAs using a radio-frequency glow discharge system. The samples were annealed in an Ar atmosphere at 1000 °C for 10 min. During annealing, Si atoms were diffused from the a-Si:H films into the S+-implanted GaAs. The concentration [Si] of the Si atoms increased with the dose [S] of the implanted S+ ions as [Si]=1.6×10−6 [S]1.45." @default.
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- W1989039968 date "1999-12-15" @default.
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- W1989039968 title "Implant dose dependence in doping Si atoms from a-Si:H films into S+-implanted GaAs" @default.
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- W1989039968 doi "https://doi.org/10.1063/1.371746" @default.
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