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• W1989161877 abstract "The oxidation caused by Ge condensation increases the Ge fraction in a SiGe-on-insulator (SGOI) and significantly increases the hole mobility. This effect can be exploited to improve the sensitivity of SGOI nanowires. However, previous studies have found that the sensitivity of SGOI nanowires degrades when the Ge fraction exceeds 20%, because a high Ge fraction destabilises the surface state of SiGe. In this work, a top surface passivation plasma-enhanced chemical vapour deposition SiO2 layer deposited on a Si0.8Ge0.2 nanowire improved its sensitivity by ∼1.3 times that of the nanowire sample without a top passivation layer." @default.
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• W1989161877 date "2012-01-01" @default.
• W1989161877 modified "2023-10-18" @default.
• W1989161877 title "Sensitivity enhancement in SiGe-on-insulator nanowire biosensor fabricated by top surface passivation" @default.
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• W1989161877 doi "https://doi.org/10.1049/mnl.2012.0214" @default.
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