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- W1989267304 abstract "When implanting ions through a window the equidensity lines of ions are influenced by higher moments of the impurity ion distribution versus depth into the substrate. This effect is particularly noticeable if the ions are light and the ion energy is high, say higher than 300 keV. The shape of pn junctions of directly implanted shallow transistors is affected. Homogenisation of the electrical field, being necessary for high voltage, or high frequency operation is not possible, without considering the fine structure of the ion distribution near the surface and particularly near the mask edges. The influence of higher moments is also important for the case of direct implantation of wells for CMOS. Ion equidensity distributions below a window in the mask are shown for boron and arsenic implantation into silicon at energies between 70 keV and 800 keV." @default.
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- W1989267304 date "1983-01-01" @default.
- W1989267304 modified "2023-09-25" @default.
- W1989267304 title "Implantation through a window with medium to high energy ions" @default.
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- W1989267304 doi "https://doi.org/10.1016/s0026-2692(83)80166-9" @default.
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