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- W1989323796 abstract "Two methods have been used to calculate the ε2-spectra of amorphous IV-IV and III-V semiconductors: The “Complex-band structure” (CBS-)method and the “non-direct transition” (NDT-)method including energy dependent matrix elements. Both methods start with the calculation of the electronic properties of the corresponding crystals. Results for amorphous Ge, Si, GaP, GaAs, GaSb, InP, InAs, and InSb are compared with experimental ε2-spectra. Das ε2-Spektrum amorpher IV-IV und III-V Halbleiter wurde berechnet mit Hilfe der Methode der komplexen Bandstruktur (CBS) und der Methode der nicht-direkten Übergänge (NDT), wobei bei letzterer die Energieabhängigkeit der Matrixelemente berücksichtigt wurde. Beide Methoden gehen aus von der Berechnung elektronischer Eigenschaften der entsprechenden kristallinen Phasen. Die Ergebnisse für Ge, Si, GaP, GaAs, GaSb, InP, InAs und InSb werden mit experimentellen ε2-Spektren verglichen." @default.
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- W1989323796 date "1972-02-01" @default.
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- W1989323796 title "Optical properties of amorphous III–V compounds. II. Theory" @default.
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- W1989323796 doi "https://doi.org/10.1002/pssb.2220490214" @default.
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