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- W1989454910 abstract "A high voltage trench gate MOSFET (TMOS) with an ultra-low specific on-resistance (R <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>on</sub> ) is proposed. The MOSFET is characterized by the combination of a trench gate and two buried p-islands (BPIs) formed in the n-epitaxial layer by the self-alignment (BPIs TMOS). In the blocking state, the superjunction structure, formed by the BPIs/n-drift region, sustains a higher breakdown voltage (BV). The high drift region doping concentration due to the superjunction structure lowers R <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>on</sub> . Influences of structure parameters on the breakdown voltage and specific on-resistance are analyzed for the proposed device by simulator MEDICI. BV of 85V and R <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>on</sub> of 22mΩ.mm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> are obtained." @default.
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- W1989454910 date "2010-07-01" @default.
- W1989454910 modified "2023-09-23" @default.
- W1989454910 title "Ultra-low on-resistance trench gate MOSFET with buried p-island" @default.
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- W1989454910 doi "https://doi.org/10.1109/icccas.2010.5581948" @default.
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