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- W1989469310 abstract "Abstract Selenium implantation at room temperature in s-doped expitaxial GaAs layers as a means of the formation of n+ layers has been investigated. Doping profiles for Se-implanted layers have been examined by a method. It has been shown that n+ layers with a maximum carrier concentration of ∼1.5 × 1018cm−3 can be formed by implantation followed by a 15 min annealing at 950°C. Contact resistance of ohmic electrodes is reduced by use of the Se-implanted n+ layers, resulting in the improvement on GaAs FET performance. Measured minimum noise figure of the Se-implanted GaAs FETs is 0.74 dB at 4 GHz." @default.
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- W1989469310 date "1981-04-01" @default.
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- W1989469310 title "Selenium implantation in epitaxial gallium arsenide layers" @default.
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- W1989469310 doi "https://doi.org/10.1016/0029-554x(81)90800-4" @default.
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