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• W1989469703 abstract "Electronic and structural properties of ex-situ fabricated Ga2O3GaAs interfaces have been investigated. The fabrication comprises thermal desorption of native oxide and subsequent Ga2O3 film deposition on (100) GaAs wafers in ultra-high vacuum. Interfacial x-ray photoelectron spectroscopy revealed the absence of AsxOy indicating thermodynamic stability of the oxide-GaAs interface. A low interface recombination velocity S of 9000 cm/s equivalent to an interface state density Dit in the upper 1010 cm−2 eV−1 range has been inferred. The technique provides excellent passivation for GaAs wafers or surfaces exposed to room air and/or processing environments during fabrication of devices such as FETs, HBTs, etc." @default.
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• W1989469703 date "1997-04-01" @default.
• W1989469703 modified "2023-10-01" @default.
• W1989469703 title "A Ga2O3 passivation technique compatible with GaAs device processing" @default.
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• W1989469703 doi "https://doi.org/10.1016/s0038-1101(96)00183-9" @default.
• W1989469703 hasPublicationYear "1997" @default.
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