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- W1989488070 abstract "n-Type doping of CdSe nanowires is achieved by either co-evaporating indium at different temperatures during growth, or post-growth doping via a thermal diffusion process. The conductivity of CdSe nanowires is tuned reproducibly by nearly five orders of magnitude in a controlled way, and carrier concentration as high as ∼1019 cm−3 is reached (see image). The doped CdSe nanowires show high sensitivity to light irradiation. Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article." @default.
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- W1989488070 date "2009-02-06" @default.
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- W1989488070 title "Tuning Electrical and Photoelectrical Properties of CdSe Nanowires via Indium Doping" @default.
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- W1989488070 doi "https://doi.org/10.1002/smll.200801006" @default.
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