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• W1989603984 endingPage "3397" @default.
• W1989603984 startingPage "3391" @default.
• W1989603984 abstract "Initial stages of Co${mathrm{Si}}_{2}$ formation on the silicon (111) surface were investigated by low-energy electron diffraction (LEED), $x$-ray photoemission spectroscopy (XPS), and angle-resolved ultraviolet photoemission spectroscopy (ARUPS) techniques under ultrahigh-vacuum conditions. At room temperature, a small amount of Co evaporated onto Si reacts strongly with Si atoms to form cobalt silicide. With increasing coverage ($ensuremath{Theta}>4$ monolayers) results from surface techniques indicate an enrichment of the metal in the probed region and the ultraviolet photoemission spectroscopy spectrum resembles that of a Co bulk metal. The behavior of these metal-silicon interfaces with annealing at ensuremath{sim}600ifmmode^circelsetextdegreefi{}C under ultrahigh-vacuum conditions was also examined. In the submonolayer range, two LEED superstructures, $sqrt{7}ifmmodetimeselsetexttimesfi{}sqrt{7}$ and 2ifmmodetimeselsetexttimesfi{}1, are found, while at higher coverage the formation of an epitaxial Co${mathrm{Si}}_{2}$ film can be achieved. First experimental ARUPS measurements of the interface are presented and compared to very recent calculations." @default.
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• W1989603984 date "1984-03-15" @default.
• W1989603984 modified "2023-10-17" @default.
• W1989603984 title "Cobalt disilicide epitaxial growth on the silicon (111) surface" @default.
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• W1989603984 doi "https://doi.org/10.1103/physrevb.29.3391" @default.
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